Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.

Supporting Information for Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

Low - Resistance 2 D / 2 D Ohmic Contacts : A Universal Approach to 2 High - Performance WSe 2 , MoS 2 , and MoSe 2 Transistors

2 High-Performance WSe2, MoS2, and MoSe2 Transistors 3 Hsun-Jen Chuang,† Bhim Chamlagain,† Michael Koehler,‡ Meeghage Madusanka Perera,† Jiaqiang Yan,‡,§ 4 David Mandrus,‡,§ David Tomańek, and Zhixian Zhou*,† 5 †Physics and Astronomy Department, Wayne State University, Detroit, Michigan 48201, United States 6 ‡Department of Materials Science and Engineering, The University of Tennessee, Knoxvil...

Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors

A gate-controlled metal-semiconductor barrier modulation and its effect on carrier transport were investigated in two-dimensional (2D) transition metal dichalcogenide (TMDC) field effect transistors (FETs). A strong photoresponse was observed in both unipolar MoS2 and ambipolar WSe2 FETs (i) at the high drain voltage due to a high electric field along the channel for separating photo-excited ch...

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

Among various 2D materials, monolayer transition-metal dichalcogenide (mTMD) semiconductors with intrinsic band gaps (1–2 eV) are considered promising candidates for channel materials in next-generation transistors. Low-resistance metal contacts to mTMDs are crucial because currently they limit mTMD device performances. Hence, a comprehensive understanding of the atomistic nature of metal conta...

Enhanced Visibility of MoS2, MoSe2, WSe2 and Black-Phosphorus: Making Optical Identification of 2D Semiconductors Easier

We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black-phosphorus. We find that the use of Si3N4/Si su...